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High mobility and large domain decoupled epitaxial graphene on SiC (000(1)over-bar) surface obtained by nearly balanced hydrogen etching

Release time:2019-04-14|Hits:

Affiliation of Author(s):晶体材料研究所

Journal:Materials letters

All the Authors:chenxiufang,xuxiangang,huxiaobo,zhaoxian

First Author:张福生

Indexed by:Unit Twenty Basic Research

Document Code:15CE5131C3D44DDA8B1ADB1112E420A4

Volume: 195

Page Number:82

Translation or Not:no

Date of Publication:2017-05-15

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Graphene Nucleation Preference at CuO Defects Rather Than Cu2O on Cu(111): A Combination of DFT Calculation and Experiment
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Cascaded third-harmonic-generation converter based on a single ADP crystal

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