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Graphene Nucleation Preference at CuO Defects Rather Than Cu2O on Cu(111): A Combination of DFT Calculation and Experiment

Release time:2019-04-14|Hits:

Affiliation of Author(s):晶体材料研究所

Journal:ACS Appl. Mater. Interfaces,

All the Authors:Yu Fapeng,chengxiufeng,zhaoxian

First Author:liyanlu

Indexed by:Unit Twenty Basic Research

Document Code:4F843EB1843C4FC3B61248D7BA220D85

Volume:10

Page Number:43156

Translation or Not:no

Date of Publication:2018-11-06

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High mobility and large domain decoupled epitaxial graphene on SiC (0001¯) surface obtained by nearly balanced hydrogen etching
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High mobility and large domain decoupled epitaxial graphene on SiC (000(1)over-bar) surface obtained by nearly balanced hydrogen etching

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