Paper Publications

Home >> Scientific Resear... >> Paper Publication...

High mobility and large domain decoupled epitaxial graphene on SiC (0001¯) surface obtained by nearly balanced hydrogen etching

Release time:2019-04-14|Hits:

Affiliation of Author(s):晶体材料研究所

Journal:Mater Lett

All the Authors:chenxiufang,xuxiangang,huxiaobo,zhaoxian

First Author:张福生

Indexed by:Unit Twenty Basic Research

Document Code:7B76B4358DC44923BDA952C8996BBAC2

Volume:195

Page Number:82

Translation or Not:no

Date of Publication:2017-06-01

Pre One:
The origin of coloration of CaGdAlO4 crystals and its effect on their physical properties
Next One:
Graphene Nucleation Preference at CuO Defects Rather Than Cu2O on Cu(111): A Combination of DFT Calculation and Experiment

中文    |   MOBILE Version   |   Login SDU   

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click: Times

The Open Time: --

The Last Update Time: --