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Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity
Release Time:2019-10-24
  • Institution:
    集成电路学院
  • Journal:
    IEEE Electron Device Letters
  • First Author:
    杨进
  • All the Authors:
    周莉,王卿璞,Song A M,辛倩,王一鸣
  • Document Code:
    380A7EA0D0E84282A8B90E41FA3EADCD
  • Volume:
    39
  • Issue:
    4
  • Page Number:
    516
  • Number of Words:
    4
  • Translation or Not:
    No
  • Date of Publication:
    2018-03
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