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Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity

Release time:2019-10-24|Hits:

Affiliation of Author(s):微电子学院

Journal:IEEE Electron Device Letters

All the Authors:xinqian,Yiming Wang,Zhou Li,wangqingpu,Song A M

First Author:杨进

Indexed by:Unit Twenty Basic Research

Document Code:380A7EA0D0E84282A8B90E41FA3EADCD

Volume:39

Issue:4

Page Number:516

Translation or Not:no

Date of Publication:2018-04-01

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Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors
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