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Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors

Release time:2019-10-24|Hits:

Affiliation of Author(s):微电子学院

Journal:IEEE Electron Device Letters

All the Authors:Song A M,Yiming Wang,linzhaojun,Zhou Li,xinqian

First Author:liyunpeng

Indexed by:Unit Twenty Basic Research

Document Code:336EFF6A821E4222AA5EAB0BA52D3891

Volume:39

Issue:2

Page Number:208

Translation or Not:no

Date of Publication:2018-02-01

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Ambipolar SnOx thin-film transistors achieved at high sputtering power
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Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity

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