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Light-induced resistive switching in Cs0.15FA0.85PbI3-XBrX perovskite-based memristors
  • Institution:
    信息科学与工程学院
  • Title of Paper:
    Light-induced resistive switching in Cs0.15FA0.85PbI3-XBrX perovskite-based memristors
  • Journal:
    SOLID-STATE ELECTRONICS
  • First Author:
    詹学鹏
  • Document Code:
    5594D1CABAD740B381B7CAC0A474982D
  • Issue:
    186
  • Number of Words:
    5
  • Translation or Not:
    No
  • Date of Publication:
    2021-12
  • Release Time:
    2021-10-17
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