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Photo‐Enhanced Resistive Switching Effect in High‐Performance MAPbI3 Memristors
  • Institution:
    光学高等研究中心
  • Title of Paper:
    Photo‐Enhanced Resistive Switching Effect in High‐Performance MAPbI3 Memristors
  • Journal:
    Advanced Materials Interfaces
  • First Author:
    刘泽翰
  • Document Code:
    36A0010986584C62BA06F9A556D8BE9D
  • Issue:
    2205
  • Number of Words:
    4
  • Translation or Not:
    No
  • Date of Publication:
    2022-10
  • Release Time:
    2022-11-15
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