NVOHLtS1swZK72HYJUlfxsGZfwbICPcxjuhWp87P8lFLXbVstqftbiiIrKaB

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Comprehensive insights into electrical properties enhancement of boron？sulfur co-doped diamond via ion implantation: First principles calculation and experimental validation

Release Time:2025-10-06| Hits:

Institution:机械工程学院

Title of Paper:Comprehensive insights into electrical properties enhancement of boron？sulfur co-doped diamond via ion implantation: First principles calculation and experimental validation

Journal:Diamond and Related Materials

First Author:赵旺

Document Code:C0CD6AAEF8D34B5280CD237C18446496

Volume:157

Issue:1

Page Number:112513

Number of Words:8

Translation or Not:No

Date of Publication:2025-08

Release Time:2025-10-06

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