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.Toward High-Peak-to-Valley-Ratio Graphene Resonant Tunneling Diodes. Nano Letters, 23:8132,2023.
.A Universal Approach to Determine the Atomic Layer Numbers in Two-Dimensional Materials Using Dark-Field Optical Contrast. Nano Letters, 23:9170,2023.
.Polarization-selective modulation of meandered-line metamaterials with graphene surface plasmonicsOptics and Lasers in Engineering:107693,2023.
.Polarization-selective modulation of meandered-line metamaterials with graphene surface plasmonicsOptics and Lasers in Engineering:107693,2023.
Chen, Wenshan.(InxGa1？x)2O3 Thin Film Based Solar-Blind Deep UV Photodetectors with Ultra-High Detectivity and On/Off Current Ratio. Adv optical Mater, 10,2022.
王珣珣.Enhancement-mode Ga2O3 FET with high mobility using p-type SnO heterojunction. IEEE Electron Device Letters, 43:44-47,2022.
纪兴启.Amorphous Ga2O3 Thin-Film Phototransistors for Imaging and Logic IllustrationIEEE Electron Device Letters,2023.
纪兴启.Amorphous Ga2O3 Schottky photodiodes with high-responsivity and photo-to-dark current ratio,JOURNAL OF ALLOYS AND COMPOUNDS,2023.
.A thin-film transistor with no apparent channel for simplified, high aperture ratio pixel architecturesJOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY:765,2022.
林晓昱.High-Performance 1-V IGZO Thin-Film Transistors Gated With Aqueous and Organic Electrolyte-Anodized AlxOyIEEE Transactions on Electron Devices:537,2022.
