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Zn2GeO4-x/ZnS heterojunctions fabricated via in situ etching sulfurization for Pt-free photocatalytic hydrogen evolution: interface roughness and defect engineering

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Institution:化学与化工学院
Title of Paper:Zn2GeO4-x/ZnS heterojunctions fabricated via in situ etching sulfurization for Pt-free photocatalytic hydrogen evolution: interface roughness and defect engineering
Journal:Phys. Chem. Chem. Phys。
First Author:王永丽
Document Code:BC1038249B1042AEB481AE0A62BE5A7E
Volume:22
Issue:18
Page Number:10265
Number of Words:5000
Translation or Not:No
Date of Publication:2020-05
Release Time:2021-06-02

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