中文

Zn2GeO4-x/ZnS heterojunctions fabricated via in situ etching sulfurization for Pt-free photocatalytic hydrogen evolution: interface roughness and defect engineering

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  • Affiliation of Author(s):化学与化工学院

  • Journal:Phys. Chem. Chem. Phys。

  • First Author:王永丽

  • Indexed by:Unit Twenty Basic Research

  • Document Code:BC1038249B1042AEB481AE0A62BE5A7E

  • Volume:22

  • Issue:18

  • Page Number:10265

  • Translation or Not:no

  • Date of Publication:2020-05-14

  • Date of Publication:2020-05-14

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