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Zn2GeO4x/ZnS heterojunctions fabricated via in situ etching sulfurization for Pt-free photocatalytic hydrogen evolution: interface roughness and defect engineering

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Institution:化学与化工学院
Title of Paper:Zn2GeO4x/ZnS heterojunctions fabricated via in situ etching sulfurization for Pt-free photocatalytic hydrogen evolution: interface roughness and defect engineering
Journal:Physical Chemistry Chemical Physics
First Author:樊唯镏
Document Code:459A9C1DF8BC4309B1D6F328614C9CAA
Number of Words:5000
Translation or Not:No
Date of Publication:2020-05
Release Time:2022-11-22

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