Fabrication and characterization of high performance InAlZnO Schottky barrier diode and its application in ultraviolet photodetection, Applied Physics Letters 119, 2021, 通讯作者.
发布时间：2024-11-08
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- 上一条：Effects of Atomic-Layer-Deposition temperature on the properties of Al2O3 insulators and InAlZnO Thin-Film-Transistors with Dual-Active-Layer structure, Applied Surface Science 578, 2022，通讯作者.
- 下一条：Room temperature fabricated high performance IAZO thin film transistors with dual-active-layer structure and sputtered Ta2O5 gate insulator, Journal of Alloys and Compounds 862, 2021, 通讯作者.