Affiliation of Author(s): : 新一代半导体材料研究院
Title of Paper: : The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode
Journal: : IEEE Transactions on Electron Devices
First Author: : 张斌
Document Code: : B1BC604AAB9442D8AE18D256B1AA3FCF
Issue: : 1
Number of Words: : 4
Translation or Not: : no
Date of Publication: : 2024-04-09
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
