Institution:新一代半导体材料研究院
Title of Paper:Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors
Journal:Journal of Physics and Chemistry of Solids
First Author:罗鑫
Document Code:1747462737015623682
Volume:187
Number of Words:4000
Translation or Not:No
Date of Publication:2024-04
Release Time:2024-05-17
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
