Affiliation of Author(s): : 新一代半导体材料研究院
Title of Paper: : Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors
Journal: : Journal of Physics and Chemistry of Solids
First Author: : 罗鑫
Document Code: : 1747462737015623682
Volume: : 187
Number of Words: : 4000
Translation or Not: : no
Date of Publication: : 2024-04-01
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
