Affiliation of Author(s): : 新一代半导体材料研究院
Title of Paper: : Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing
Journal: : Solid-State Electronics
First Author: : 陈思衡
Document Code: : 1754450306790084609
Volume: : 213
Number of Words: : 4000
Translation or Not: : no
Date of Publication: : 2024-03-01
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
