Institution:新一代半导体材料研究院
Title of Paper:Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing
Journal:Solid-State Electronics
First Author:陈思衡
Document Code:1754450306790084609
Volume:213
Number of Words:4000
Translation or Not:No
Date of Publication:2024-03
Release Time:2024-05-17
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
