Affiliation of Author(s): : 新一代半导体材料研究院
Title of Paper: : Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode
Journal: : IEEE Electron Device Letters
First Author: : 王新宇
Document Code: : 1806576903362662402
Number of Words: : 3
Translation or Not: : no
Date of Publication: : 2024-08-10
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
