Institution:新一代半导体材料研究院
Title of Paper:Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode
Journal:IEEE Electron Device Letters
First Author:王新宇
Document Code:1806576903362662402
Number of Words:3
Translation or Not:No
Date of Publication:2024-08
Release Time:2024-09-15
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
