Institution:新一代半导体材料研究院
Title of Paper:Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer
Journal:APPLIED PHYSICS LETTERS
First Author:罗鑫
Document Code:1843556233512062977
Volume:125
Issue:12
Number of Words:4000
Translation or Not:No
Date of Publication:2024-09
Release Time:2024-12-09
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
