Affiliation of Author(s): : 新一代半导体材料研究院
Title of Paper: : Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer
Journal: : APPLIED PHYSICS LETTERS
First Author: : 罗鑫
Document Code: : 1843556233512062977
Volume: : 125
Issue: : 12
Number of Words: : 4000
Translation or Not: : no
Date of Publication: : 2024-09-16
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
