Affiliation of Author(s): : 新一代半导体材料研究院
Title of Paper: : High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V
Journal: : IEEE Electron Device Letters
First Author: : 陈思衡
Document Code: : CFFF4E6B36CF438F85A95FA554A9E105
Volume: : 12
Issue: : 45
Page Number: : 2343
Number of Words: : 3000
Translation or Not: : no
Date of Publication: : 2024-12-01
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
