Institution:新一代半导体材料研究院
Title of Paper:High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V
Journal:IEEE Electron Device Letters
First Author:陈思衡
Document Code:CFFF4E6B36CF438F85A95FA554A9E105
Volume:12
Issue:45
Page Number:2343
Number of Words:3000
Translation or Not:No
Date of Publication:2024-12
Release Time:2024-12-19
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
