Institution:新一代半导体材料研究院
Title of Paper:Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode
Journal:物理结果
First Author:Wang, Xinyu
Document Code:1806576901185818626
Volume:62
Number of Words:5000
Translation or Not:No
Date of Publication:2024-07
Release Time:2025-01-15
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
