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Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode
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Affiliation of Author(s): : 新一代半导体材料研究院

Title of Paper: : Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode

Journal: : 物理结果

First Author: : Wang, Xinyu

Document Code: : 1806576901185818626

Volume: : 62

Number of Words: : 5000

Translation or Not: : no

Date of Publication: : 2024-07-01

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Gender : Male

School/Department : 新一代半导体材料研究院

Date of Employment : 2020-11-15

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