Affiliation of Author(s): : 新一代半导体材料研究院
Title of Paper: : Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode
Journal: : 物理结果
First Author: : Wang, Xinyu
Document Code: : 1806576901185818626
Volume: : 62
Number of Words: : 5000
Translation or Not: : no
Date of Publication: : 2024-07-01
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
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