山东大学教师主页韩吉胜 The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices Home

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The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices

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Institution:新一代半导体材料研究院

Title of Paper:The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices

Journal:Physica Status Solidi A-Applications and Materials Science

First Author:罗兰

Document Code:1906642867614052353

Number of Words:8

Translation or Not:No

Date of Publication:2025-01

Release Time:2025-05-16

Pre One : Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination

Next One : A failure mechanism of 1.2 kV/20 A 4H-SiC Schottky barrier diodes under humidity and high reverse bias voltage

Personal information

Gender : Male

School/Department : 新一代半导体材料研究院

Date of Employment : 2020-11-15

Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials

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