Affiliation of Author(s): : 新一代半导体材料研究院
Title of Paper: : Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination
Journal: : MICROELECTRONICS JOURNAL
First Author: : 王新宇
Document Code: : B553EB6CF2E14F2F938DCAF7AB87DCE3
Issue: : 161
Page Number: : 106732
Number of Words: : 5000
Translation or Not: : no
Date of Publication: : 2025-05-13
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
