山东大学教师主页韩吉胜 Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination Home

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Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination

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Institution:新一代半导体材料研究院

Title of Paper:Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination

Journal:MICROELECTRONICS JOURNAL

First Author:王新宇

Document Code:B553EB6CF2E14F2F938DCAF7AB87DCE3

Issue:161

Page Number:106732

Number of Words:5000

Translation or Not:No

Date of Publication:2025-05

Release Time:2025-05-16

Pre One : Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature

Next One : The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices

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Gender : Male

School/Department : 新一代半导体材料研究院

Date of Employment : 2020-11-15

Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials

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