Affiliation of Author(s): : 新一代半导体材料研究院
Title of Paper: : Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature
First Author: : 王天露
Document Code: : 1897581192143368193
Page Number: : 179-183
Number of Words: : 3
Translation or Not: : no
Date of Publication: : 2025-01-16
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
