Institution:新一代半导体材料研究院
Title of Paper:Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature
Journal:21st China International Forum on Solid State Lighting and 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2024
First Author:王天露
Document Code:1897581192143368193
Page Number:179-183
Number of Words:3
Translation or Not:No
Date of Publication:2025-01
Release Time:2025-05-16
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
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