Institution:晶体材料研究院(晶体材料全国重点实验室)
Title of Paper:Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration
Journal:MICROELECTRONICS JOURNAL
First Author:王天露
Document Code:1915344292781383681
Volume:160
Issue:0
Number of Words:7
Translation or Not:No
Date of Publication:2025-06
Release Time:2025-05-16
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
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