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一种确定GaN晶体管纳米尺寸栅长二维电子气面密度的方法
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Title: : 一种确定GaN晶体管纳米尺寸栅长二维电子气面密度的方法

Affilication of Author(s): : 新一代半导体材料研究院

Type of Patent: : 发明

Application Number: : 202310430551.0

Number of Inventors: : 8

Service Invention or Not: : no

Application Date: : 2023-04-18

Publication Date: : 2024-01-30

Authorization Date: : 2024-01-30

Personal information


Gender : Male

School/Department : 新一代半导体材料研究院

Date of Employment : 2020-11-15

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