Title: : 一种高性能GaN MIS-HEMT的制备方法
Affilication of Author(s): : 新一代半导体材料研究院
Type of Patent: : 发明
Application Number: : 202310437073.6
Number of Inventors: : 8
Service Invention or Not: : no
Application Date: : 2023-04-18
Publication Date: : 2024-02-02
Authorization Date: : 2024-02-02
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
