Title:一种高性能GaN MIS-HEMT的制备方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202310437073.6
Number of Inventors:8
Service Invention or Not:No
Application Date:2023-04-18
Publication Date:2024-02-02
Authorization Date:2024-02-02
Release Time:2024-05-18
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
