Title: : 碳化硅混合3C-SiC接触PN结肖特基二极管及制备方法
Affilication of Author(s): : 新一代半导体材料研究院
Type of Patent: : 发明
Application Number: : 202311453784.9
Number of Inventors: : 4
Service Invention or Not: : no
Application Date: : 2023-11-03
Publication Date: : 2024-03-01
Authorization Date: : 2024-03-01
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
