Title:碳化硅混合3C-SiC接触PN结肖特基二极管及制备方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202311453784.9
Number of Inventors:4
Service Invention or Not:No
Application Date:2023-11-03
Publication Date:2024-03-01
Authorization Date:2024-03-01
Release Time:2024-05-18
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
