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一种改善短路能力的SiCMOSFET器件
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Title: : 一种改善短路能力的SiCMOSFET器件

Affilication of Author(s): : 新一代半导体材料研究院

Type of Patent: : 发明

Application Number: : 202311746831.9

Number of Inventors: : 4

Service Invention or Not: : no

Application Date: : 2023-12-19

Publication Date: : 2024-03-05

Authorization Date: : 2024-03-05

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Gender : Male

School/Department : 新一代半导体材料研究院

Date of Employment : 2020-11-15

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