Title:一种改善短路能力的SiCMOSFET器件
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202311746831.9
Number of Inventors:4
Service Invention or Not:No
Application Date:2023-12-19
Publication Date:2024-03-05
Authorization Date:2024-03-05
Release Time:2024-05-18
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
