Title:一种增强型GaN HEMT器件结构和制造方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202410508321.6
Number of Inventors:4
Service Invention or Not:No
Application Date:2024-04-26
Publication Date:2024-07-09
Authorization Date:2024-07-09
Release Time:2024-07-11
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
