Title: : 一种增强型GaN HEMT器件结构和制造方法
Affilication of Author(s): : 新一代半导体材料研究院
Type of Patent: : 发明
Application Number: : 202410508321.6
Number of Inventors: : 4
Service Invention or Not: : no
Application Date: : 2024-04-26
Publication Date: : 2024-07-09
Authorization Date: : 2024-07-09
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
