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基于In组分调控InGaN的增强型GaN功率器件
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Title: : 基于In组分调控InGaN的增强型GaN功率器件

Affilication of Author(s): : 新一代半导体材料研究院

Type of Patent: : 发明

Application Number: : 202410508307.6

Number of Inventors: : 4

Service Invention or Not: : no

Application Date: : 2024-04-26

Publication Date: : 2024-07-12

Authorization Date: : 2024-07-12

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Gender : Male

School/Department : 新一代半导体材料研究院

Date of Employment : 2020-11-15

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