Title:基于In组分调控InGaN的增强型GaN功率器件
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202410508307.6
Number of Inventors:4
Service Invention or Not:No
Application Date:2024-04-26
Publication Date:2024-07-12
Authorization Date:2024-07-12
Release Time:2024-07-16
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
