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一种碳化硅器件双层金属的刻蚀方法
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Title: : 一种碳化硅器件双层金属的刻蚀方法

Affilication of Author(s): : 新一代半导体材料研究院

Type of Patent: : 发明

Application Number: : 202311623560.8

Number of Inventors: : 3

Service Invention or Not: : no

Application Date: : 2023-11-30

Publication Date: : 2024-08-02

Authorization Date: : 2024-08-02

Personal information


Gender : Male

School/Department : 新一代半导体材料研究院

Date of Employment : 2020-11-15

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