Title:一种碳化硅器件双层金属的刻蚀方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202311623560.8
Number of Inventors:3
Service Invention or Not:No
Application Date:2023-11-30
Publication Date:2024-08-02
Authorization Date:2024-08-02
Release Time:2024-08-22
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
