Title: : 基于GaN HEMT结终端的SiC肖特基二极管
Affilication of Author(s): : 新一代半导体材料研究院
Type of Patent: : 发明
Application Number: : 202410559014.0
Number of Inventors: : 4
Service Invention or Not: : no
Application Date: : 2024-05-08
Publication Date: : 2024-08-06
Authorization Date: : 2024-08-06
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
