Title:基于GaN HEMT结终端的SiC肖特基二极管
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202410559014.0
Number of Inventors:4
Service Invention or Not:No
Application Date:2024-05-08
Publication Date:2024-08-06
Authorization Date:2024-08-06
Release Time:2024-08-22
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
