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Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications
  • Title of Paper:
    Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications
  • Journal:
    Nanoscale
  • First Author:
    Yanhao Wang
  • Correspondence Author:
    Yu Zhang*, Lin Han*,Hong Liu*
  • All the Authors:
    Yakun Gao, Chao Wang, Yingkuan Han, Bin Wei,Jianwei Gao
  • Volume:
    12
  • Issue:
    35
  • Page Number:
    18356-18362
  • Translation or Not:
    No
  • Date of Publication:
    2020-09
  • Release Time:
    2024-04-17
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