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Construction of high field-effect mobility multilayer MoS2 Field-effect transistors with excellent stability through interface engineering
  • Title of Paper:
    Construction of high field-effect mobility multilayer MoS2 Field-effect transistors with excellent stability through interface engineering
  • Journal:
    ACS Applied Electronic Materials
  • First Author:
    Jianfeng Jiang
  • Correspondence Author:
    Lin Han*,Hong Liu*
  • All the Authors:
    Xianjin Feng, Yuanhua Sang, Jinbo Pang, Hao Ji, Jiazhi Duan, Aizhu Wang,Yu Zhang
  • Volume:
    2
  • Issue:
    7
  • Page Number:
    2132-2140
  • Translation or Not:
    No
  • Date of Publication:
    2020-06
  • Release Time:
    2024-04-17
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