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    SiC单晶衬底研制

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    • Project Name:SiC单晶衬底研制

    • Institution:晶体材料研究院（晶体材料全国重点实验室）

    • Leading Scientist:胡小波

    • Supported by:Institute of Semiconductors, Chinese Academy of Sciences

    • Nature of Project:纵向

    • Project Level:省、部委级

    • Project Participants:胡小波,胡小波

    • Project Number:kyxm-28304

    • Project Approval Number:11250005250708

    • Date of Project Approval:2007-07-01

    • Scheduled Completion Time:2009-12-31

    • Date of Project Completion:2009-12-31

    • Date of Project Initiation:2007-07-01

    • Release Time:2019-04-17
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