Paper Publications

• [1]  李斌. 单晶金刚石声子非简谐衰减效应研究.  《人工晶体学报》,  52,  442-451, 2023. 
• [2]  陈可睿. Identification and formation mechanism of threading screw dislocations in 4H-SiC crystal.  JOURNAL OF ALLOYS AND COMPOUNDS ,  2025. 
• [3]  王江风. Decoding “black-white band” defects in PVT grown 4H-SiC and its suppression through thermal field optimization.pdf.  Materials Science in Semiconductor Processing,  2025. 
• [4]  张宁. Numerical simulation of thick SiC crystal based on ring-shaped powder structure.  Journal of crystal growth,  665,  2025. 
• [5]  王兴龙. Induction frequency modulation for 4H-SiC growth: Thermal field evolution, dislocation suppression, and high-quality crystal preparation via PVT method.  JOURNAL OF ALLOYS AND COMPOUNDS ,  1036,  2025. 
• [6]  陈可睿. Identification and formation mechanism of threading screw dislocations in 4H-SiC crystal.  JOURNAL OF ALLOYS AND COMPOUNDS ,  1040,  2025. 
• [7]  Wang, Xinyu. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode.  Results in Physics,  1, 2024. 
• [8]  崔潆心. Threading dislocation classification for 4H-SiC substrates using the KOH etching method.  CrystEngComm,  978, 2018. 
• [9]  王新宇. Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination.  MICROELECTRONICS JOURNAL,  106732, 2025. 
• [10]  王新宇. Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode.  2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),  2024. 
• [11]  Wang, Xinyu. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode.  物理结果,  62,  2024. 
• [12]  李华东. Dislocation proliferation at the growth crystal seed interface of physical vapor transport grown 4H-SiC crystals.  PHYSICA SCRIPTA Journal,  2024. 
• [13]  仲光磊. SiC 单晶生长初期表面台阶及微管特性.  硅酸盐学报,  2022. 
• [14]  沙慧茹. 砷化镓光导开关的损伤形貌研究.  《强激光与粒子束》,  34,  1-6, 2022. 
• [15]  王新宇. Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode.  IEEE Electron Device Letters,  2024.