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    高质量6英寸SiC单晶生长与衬底加工技术研究

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    • Project Name:高质量6英寸SiC单晶生长与衬底加工技术研究

    • Institution:晶体材料研究院（晶体材料全国重点实验室）

    • Leading Scientist:胡小波

    • Supported by:国网山东省电力公司电力科学研究院

    • Nature of Project:横向

    • Project Participants:胡小波,徐现刚

    • Project Number:kyxm-61699

    • Project Approval Number:11261602

    • Date of Project Approval:2016-01-01

    • Scheduled Completion Time:2018-12-31

    • Date of Project Completion:2018-12-31

    • Date of Project Initiation:2016-01-01

    • Release Time:2019-04-18
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