中文
JpHINsAOLXJoMvldr9x2mqT8dp5L32V6Zjc2SzI1sBHGF7ACMIGkmfdYRYqG
    Home > Scientific Research > Paper Publications

    Characterization of Nitrogen-Boron doped 4H-SiC substrates

    Hits:：

    • Institution:晶体材料研究所

    • Title of Paper:Characterization of Nitrogen-Boron doped 4H-SiC substrates

    • Journal:International Journal of ELECTROCHEMICAL

    • First Author:胡小波

    • All the Authors:徐现刚,彭燕

    • Document Code:lw-151719

    • Translation or Not:No

    • Date of Publication:2013-05

    • Release Time:2019-04-14
    Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
    Information desk: (86) - 0531-88395114
    On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University    		 Click:
      MOBILE Version

    The Last Update Time:..