中文
Home > Scientific Research > Paper Publications

Influence of the misorientation of 6H-SiC substrate on the quality of GaN epilayer grown by MOVPE

Hits:

  • Affiliation of Author(s):晶体材料研究所

  • Journal:JOURNAL OF ALLOYS AND COMPOUNDS

  • All the Authors:xuxiangang

  • First Author:huxiaobo

  • Indexed by:Unit Twenty Basic Research

  • Document Code:lw-161338

  • Volume:509

  • Page Number:3656

  • Translation or Not:no

  • Date of Publication:2011-10-26

  • Date of Publication:2011-10-26
Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University		 Click:
  MOBILE Version

The Last Update Time:..