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    Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography

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    • Institution:晶体材料研究所

    • Title of Paper:Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography

    • Journal:Journal of Applied Crystallography

    • First Author:胡小波

    • Document Code:lw-87289

    • Volume:42

    • Page Number:1068

    • Translation or Not:No

    • Date of Publication:2009-10

    • Release Time:2019-04-14
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