中文

Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography

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  • Affiliation of Author(s):晶体材料研究所

  • Journal:Journal of Applied Crystallography

  • First Author:huxiaobo

  • Indexed by:Applied Research

  • Document Code:lw-87289

  • Volume:42

  • Page Number:1068

  • Translation or Not:no

  • Date of Publication:2009-10-03

  • Date of Publication:2009-10-03

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