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    High mobility and large domain decoupled epitaxial graphene on SiC (0001¯) surface obtained by nearly balanced hydrogen etching

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    • Institution:晶体材料研究院（晶体材料全国重点实验室）

    • Title of Paper:High mobility and large domain decoupled epitaxial graphene on SiC (0001¯) surface obtained by nearly balanced hydrogen etching

    • Journal:Mater Lett

    • First Author:张福生

    • All the Authors:陈秀芳,徐现刚,胡小波,赵显

    • Document Code:7B76B4358DC44923BDA952C8996BBAC2

    • Volume:195

    • Page Number:82

    • Translation or Not:No

    • Date of Publication:2017-06

    • Release Time:2019-10-25
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