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    Physical vapor transport growth of 4H-SiC on {000-1} vicinal surfaces

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    • Institution:晶体材料研究院（晶体材料全国重点实验室）

    • Title of Paper:Physical vapor transport growth of 4H-SiC on {000-1} vicinal surfaces

    • Journal:Materials Science Forum

    • First Author:胡小波

    • Document Code:57A464475826494993222F4DE6B7475D

    • Issue:821

    • Number of Words:3000

    • Translation or Not:No

    • Date of Publication:2015-08

    • Release Time:2022-10-29
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