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    高质量半绝缘150 mm 4H-SiC 单晶生长研究

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    • Institution:晶体材料研究院（晶体材料全国重点实验室）

    • Title of Paper:高质量半绝缘150 mm 4H-SiC 单晶生长研究

    • Journal:《人工晶体学报》

    • Key Words:数值模拟;PVT法

    • First Author:彭燕

    • Document Code:C583D59BFC5149418BFCFE93A197334D

    • Issue:5

    • Page Number:1145

    • Translation or Not:No

    • Date of Publication:2016-03

    • Release Time:2022-10-29
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