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8 英寸导电型 4H-SiC 单晶的生长

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  • Affiliation of Author(s):晶体材料研究院

  • Journal:《人工晶体学报》

  • First Author:杨祥龙

  • Document Code:DFC30C88460144EF84A22A60406A95DA

  • Issue:9-10

  • Number of Words:2000

  • Translation or Not:no

  • Date of Publication:2022-10-01

  • Date of Publication:2022-10-01
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