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    8 英寸导电型 4H-SiC 单晶的生长

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    • Institution:晶体材料研究院（晶体材料全国重点实验室）

    • Title of Paper:8 英寸导电型 4H-SiC 单晶的生长

    • Journal:《人工晶体学报》

    • First Author:杨祥龙

    • Document Code:DFC30C88460144EF84A22A60406A95DA

    • Issue:9-10

    • Number of Words:2000

    • Translation or Not:No

    • Date of Publication:2022-10

    • Release Time:2023-05-18
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