Induction frequency modulation for 4H-SiC growth: Thermal field evolution, dislocation suppression, and high-quality crystal preparation via PVT method
Hits:：
![]()
Institution:新一代半导体材料研究院
Title of Paper:Induction frequency modulation for 4H-SiC growth: Thermal field evolution, dislocation suppression, and high-quality crystal preparation via PVT method
Journal:JOURNAL OF ALLOYS AND COMPOUNDS
First Author:王兴龙
Document Code:1945405047454982145
Volume:1036
Number of Words:3000
Translation or Not:No
Date of Publication:2025-06
Release Time:2025-10-01
MOBILE Version
