中文

一种锗氮共掺的碳化硅单晶材料的生长方法

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  • Affilication of Author(s):晶体材料研究所

  • Patent Applicant:huxiaobo

  • Type of Patent:发明

  • Application Number:2017102292991

  • Number of Inventors:3

  • Service Invention or Not:no

  • Application Date:2017-04-10

  • Publication Date:2019-02-05

  • Authorization Date:2019-02-05

  • Publication Date:2019-02-05

  • Application Date:2017-04-10

  • Authorization Date:2019-02-05

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