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    一种简单、高效降低 SiC 单晶中碳包裹物的方法

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    • Title:一种简单、高效降低 SiC 单晶中碳包裹物的方法

    • Institution:新一代半导体材料研究院

    • Type of Patent:Invent

    • Application Number:201911190543.3

    • Number of Inventors:5

    • Service Invention or Not:No

    • Publication Date:2021-05-28

    • Authorization Date:2021-05-28

    • Release Time:2021-11-13
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