中文

一种简单、高效降低 SiC 单晶中碳包裹物的方法

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  • Affilication of Author(s):新一代半导体材料研究院

  • Type of Patent:发明

  • Application Number:201911190543.3

  • Number of Inventors:5

  • Service Invention or Not:no

  • Publication Date:2021-05-28

  • Authorization Date:2021-05-28

  • Publication Date:2021-05-28

  • Authorization Date:2021-05-28

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