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Institution:微电子学院

Title of Paper:High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact

Journal:IEEE Electron Device Letters

First Author:杜路路

All the Authors:Xutang Tao,Song A M,辛倩,徐明升,Wenxiang Mu,王鑫煜,辛公明,Zhitai Jia

Document Code:95E46522A7424B49812ABB6DBA13307C

Volume:40

Issue:3

Page Number:451

Translation or Not:No

Date of Publication:2019-03

Release Time:2019-06-12