GfQ7I3h94JFQMPLUjiTtfm0dGxSFG1fWYznlnYaGTJJYJwWyeo5lu8Km9Xg8
Current position: Home >> Scientific Research >> Paper Publications

Solid-liquid interface optimization and properties of ultra-wide bandgap beta-Ga2O3 grown by Czochralski and EFG methods

Hits:

Institution:晶体材料研究所

Title of Paper:Solid-liquid interface optimization and properties of ultra-wide bandgap beta-Ga2O3 grown by Czochralski and EFG methods

Journal:CrystalEngComm

First Author:Wenxiang Mu

All the Authors:Zhitai Jia,尹延如,张健,Xutang Tao

Document Code:FA30694287704C27997DCD4A8477FA10

Volume:21

Issue:17

Page Number:2762

Translation or Not:No

Date of Publication:2019-05

Release Time:2019-10-23

Prev One:Bulk growth and an efficient mid-IR laser of high-quality Er:YSGG crystals

Next One:High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact