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Growth and characterization of the β-Ga2O3 (011) plane without line-shaped defects

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Affiliation of Author(s):新一代半导体材料研究院

Journal:CRYSTENGCOMM

First Author:陈伯阳

Document Code:CBDF2C5247024888BA6BB911AD10A4DB

Issue:25

Number of Words:5

Translation or Not:no

Date of Publication:2023-02-28

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