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Institution:新一代半导体材料研究院

Title of Paper:Rapid epitaxy of 2-inch and high-quality α-Ga2O3 films by Mist-CVD method

Journal:Journal of Semiconductors

First Author:王晓杰

Document Code:131FF0B9E69B46ADB8D020C55131783B

Issue:44

Number of Words:7

Translation or Not:No

Date of Publication:2023-04

Release Time:2023-05-18